silicon 500 mw zener diodes microsemi scottsdale division 8700 e. thomas rd. po box 1390, scottsdale, az 85252 usa, (480) 941-6300, fax: (480) 947-1503 page 1 copyright ? 2005 10-18-2005 rev c www. microsemi . com scottsdale division 1n957b, -1 thru 1n992b, -1, e3 do-35 1n957b ? 992b, e3 (do-35) do-35) description appearance the popular 1n957b thru 1n992b series of 0.5 watt zener voltage regulators provides a selection from 6.8 to 200 volts in standard 5% or 10% tolerances as well as tighter tolerances identified by different suffix letters on the part number. these glass axial-leaded do-35 zeners are also optionally available with an in ternal-metallurgical-bond option by adding a ?-1? suffix as well as rohs compliant by adding an ?e3? suffix. microsemi also offers numerous other zener products to meet higher and lower power applications. do-35 (do-204ah) important: for the most current data, consult microsemi?s website: http://www.microsemi.com features applications / benefits ? jedec registered 1n957b(-1) to 1n992b(-1) series ? internal metallurgical bond option available by adding a ?-1? suffix (similar to military product) ? surface mount equivalents available as mll957b to mll992b or with ?-1? suffix for bonded in the do-213aa melf style package (consult factory for others) ? rohs compliant devices available by adding ?e3? suffix ? do-7 glass body axial-lead ed zener equiv alents are also available ? regulates voltage over a broad operating current and temperature range ? extensive selection from 6.8 to 200 v ? standard voltage tolerances are plus/minus 5% with b suffix, 10 % with a suffix id entification ? tight tolerances available in plus or minus 2% or 1% with c or d suffix respectively ? flexible axial-lead mounting terminals ? nonsensitive to esd per mil-std-750 method 1020 ? minimal capacitance (see figure 3) ? inherently radiation hard as described in microsemi micronote 050 maximum ratings mechanical and packaging ? operating and storage temperature: -65 o c to +175 o c ? thermal resistance: 250 o c/w junction to lead at 3/8 (10 mm) lead length from body, or 310 o c/w junction to ambient when mounted on fr4 pc board (1 oz cu) with 4 mm 2 copper pads and track width 1 mm, length 25 mm ? steady-state power: 0.5 watts at t l < 50 o c 3/8 inch (10 mm) from body or 0.48 w at t a < 25 o c when mounted on fr4 pc board as described for thermal resistance above (also see figure1) ? forward voltage @200 ma: 1.1 volts (maximum) for 1n957b ? 1n985b and 1.3 v for 1n985 ? 1n992b ? solder temperatures: 260 o c for 10 s (max) ? case: hermetically sealed axial-lead glass do-35 (do-204ah) package ? terminals: tin-lead (sn/pb) or rohs compliant annealed matte-tin plating solderable per mil-std-750, method 2026 ? polarity: cathode indicated by band. diode to be operated with the banded end positive with respect to the opposite end for zener regulation ? marking: part number ? tape & reel option: standard per eia-296 (add ?tr? suffix to part number) ? weight: 0.2 grams ? see package dimensions on last page
silicon 500 mw zener diodes microsemi scottsdale division page 2 www. microsemi . com scottsdale division 1n957b, -1 thru 1n992b, -1, e3 do-35 1n957b ? 992b, e3 (do-35) electrical characteristics* @ 25 o c nominal zener voltage (note 2) v z zener test current i zt max. zener impedance (note 3) z zt @ i zt z zk @ i zk max. dc zener current (note 4) i zm max. surge current (note 5) i zsm max. reverse leakage current i r @ v r max. temp. coefficient vz jedec type number (note 1) volts ma ohms ohms ma ma ma a volts %/ o c 1n957b 1n958b 1n959b 1n960b 1n961b 6.8 7.5 8.2 9.1 10 18.5 16.5 15.0 14.0 12.5 4.5 5.5 6.5 7.5 8.5 700 700 700 700 700 1.0 .5 .5 .5 .25 55 50 45 41 38 300 275 250 225 200 150 75 50 25 10 5.2 5.7 6.2 6.9 7.6 +0.05 +0.058 +0.065 +0.068 +0.075 1n962b 1n963b 1n964b 1n965b 1n966b 11 12 13 15 16 11.5 10.5 9.5 8.5 7.8 9.5 11.5 13.0 16 17 700 700 700 700 700 .25 .25 .25 .25 .25 32 31 28 25 24 175 160 150 130 120 5 5 5 5 5 8.4 9.1 9.9 11.4 12.2 +0.076 +0.077 +0.079 +0.082 +0.083 1n967b 1n968b 1n969b 1n970b 1n971b 18 20 22 24 27 7.0 6.2 5.6 5.2 4.6 21 25 29 33 41 750 750 750 750 750 .25 .25 .25 .25 .25 20 18 16 15 13 110 100 90 80 70 5 5 5 5 5 13.7 15.2 16.7 18.2 20.6 +0.085 +0.086 +0.087 +0.088 +0.090 1n972b 1n973b 1n974b 1n975b 1n976b 30 33 36 39 43 4.2 3.8 3.4 3.2 3.0 49 58 70 80 93 1000 1000 1000 1000 1500 .25 .25 .25 .25 .25 12 11 10 9.5 8.8 65 60 55 46 44 5 5 5 5 5 22.8 25.1 27.4 29.7 32.7 +0.091 +0.092 +0.093 +0.094 +0.095 1n977b 1n978b 1n979b 1n980b 1n981b 47 51 56 62 68 2.7 2.5 2.2 2.0 1.8 105 125 150 185 230 1500 1500 2000 2000 2000 .25 .25 .25 .25 .25 7.9 7.4 6.8 6.0 5.5 40 37 35 30 28 5 5 5 5 5 35.8 38.8 42.6 47.1 51.7 +0.095 +0.096 +0.096 +0.097 +0.097 1n982b 1n983b 1n984b 1n985b 1n986b 75 82 91 100 110 1.7 1.5 1.4 1.3 1.1 270 330 400 500 750 2000 3000 3000 3000 4000 .25 .25 .25 .25 .25 5.0 4.6 4.1 3.7 3.3 26 23 21 18 16 5 5 5 5 5 56.0 62.2 69.2 76.0 83.6 +0.098 +0.098 +0.099 +0.11 +0.11 1n987b 1n988b 1n989b 1n990b 1n991b 1n992b 120 130 150 160 180 200 1.0 0.95 0.85 0.80 0.68 0.65 900 1100 1500 1700 2200 2500 4500 5000 6000 6500 7100 8000 .25 .25 .25 .25 .25 .25 3.1 2.7 2.4 2.2 2.0 1.8 15 13 12 11 10 9 5 5 5 5 5 5 91.2 98.8 114.0 121.6 136.8 152.0 +0.11 +0.11 +0.11 +0.11 +0.11 +0.11 * jedec registered data note 1: the jedec type numbers shown (b suffix) have a +/-5% toleranc e on nominal zener voltage. the suffix a is used to identify +/ - 10% tolerance; suffix c is used to identify +/-2%; and suffix d is used to identify +/-1% tole rance; no suffix indicates +/-2 0% tolerance. note 2: zener voltage ( v z ) is measured after the test current has been applied for 20 +/- 5 seconds. the device shall be suspended by its leads with the inside edge of the mounting clips between .375? and .500? from the body. mounting clips shall be maintained at a temperature of 25 +8/ -2 o c. note 3: the zener impedance is derived when a 60 cycle ac current having an rms value equal to 10% of the dc zener current (i zt or i zk ) is superimposed on i zt or i zk . zener impedance is measured at 2 points to ensure a sharp knee on the breakdown curve and to eliminat e unstable units. see micronote 202 for va riation in dynamic impedance with dif ferent zener currents. note 4: the values of i zm are calculated for a +/- 5% tolerance on nominal zener voltage. allowance has been made for the rise in zener voltage above v zt which results from zener impedance and the increase in junction temperature as power dissipation approaches 400 mw. in the case of individual diodes i zm is that value of current which results in a dissipation of 400 mw at 75 o c lead temperature at 3/8? from body. note 5: the surge for i zsm is a square wave or equivalent half-sine wave pulse of 1/120 sec. duration. copyright ? 2005 10-18-2005 rev c 8700 e. thomas rd. po box 1390, scottsdale, az 85252 usa, (480) 941-6300, fax: (480) 947-1503
silicon 500 mw zener diodes microsemi scottsdale division page 3 www. microsemi . com scottsdale division 1n957b, -1 thru 1n992b, -1, e3 do-35 1n957b ? 992b, e3 (do-35) do-35) graphs temperature coefficient %/ o c rated power dissipation - mw temperature coefficient mv/ o c voltage temperature coefficient %/ o c mv change /oc t l ? lead temperature ( o c) 3/8? from body or nominal zener voltage (volts) t a on fr4 pc board figure 1 figure 2 power derating curve zener voltage temperature coefficient vs. zener voltage package dimensions all dimensions in: inch mm figure 3 capacitance vs. zener voltage (typical) copyright ? 2005 10-18-2005 rev c 8700 e. thomas rd. po box 1390, scottsdale, az 85252 usa, (480) 941-6300, fax: (480) 947-1503
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